, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB863 description ? collector-emitter breakdown voltage- : v(br)ceo= -140v(min) ? good linearity of i>e ? complement to type 2sd1148 applications ? power amplifier applications ? recommend for 70w high fidelity audio frequency amplifier output stage applications absolute maximum ratings(ta=25'c) pin: l.base 2.collector s.emitter to-3pi package symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25"c junction temperature storage temperature range value -140 -140 -5 -10 -1 100 150 -55-150 unit v v v a a w 'c ?c ?* b *!.. tav' *??: t ". ? a ' / jt__ '?'? 4 h k ! j lj - -? v> **?'* dim a b c d f h j k l n q h s t u z ~^c ?*- s-- -~ * i:- . u ;. ! . * jiv i i ? ??' r. . . , .-. -?-*-j -^r-*- mm min 19.60 15.30 4,00 0.90 3,20 2.90 0.50 19.90 1.20 10,80 4.40 3.30 1.40 1.00 2.10 7.90 max 20,10 15.70 4.60 1.10 3.40 3.10 0.70 21.30 2.20 11.00 4.60 3.35 1.60 1.20 2.30 9.10 ,.-f *' \ -?*-d nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time ofgoint in press. however, n.i semi-conductors assumes no responsibility for tiny errors or omissions discovered in its use, n.i senii-conduclors enauinuies customers to \erily that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB863 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) vse(on) icbo iebo hpe-1 hpe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain?bandwidth product conditions lc= -50ma; ib= 0 lc= -5.0a; ib= -0.5a lc= -5a; vce= -5v vcb=-140v;ie=0 veb= -5v; lc= 0 lc= -1a; vce= -5v ig= -5a; vce= -5v ie= 0; vcb= -10v; ftes,= 1.0mhz |c=-1a;vce=-10v min -140 55 25 typ. 400 15 max -2.0 -1.5 -5 -5 160 unit v v v ma u a pf mhz classifications r 55-110 0 80-160
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